Plasma has been widely used in etching,
deposition, and ion implantation process for semi-conductor manufacturing. Using
the numerical simulation, we analyze dry etching characteristics and optimize
several plasma processing source like Capacitively Coupled Plasma (CCP),
Inductively Coupled Plamsa (ICP).
Plasma Source Simulation for CCP
Variations of capacitively coupled plasma have
been mainstream plasma sources for dielectric etchers. However, the
understanding of plasma discharge is still required for further optimization,
i.e., independent control of etch rate and ion bombardment energy. We
investigate the discharge characteristics of CCP using the particle simulation
which has the advantage of being a self-consistent and fully kinetic method
that electron and ion energy distribution functions (EEPF, IEDF) can be
Probability Function (EEDF) and Ion Energy Distribution Function (IEDF) at the
Neutral beam etching simulation for nano-device
New technology of neutral beam dry etching is
suggested in order to solve device defects by ion accumulation. We have
developed kinetic simulator to improve characteristics of ion source and
Neutral beam simulation
Plasma source simulation for ICP
2-D fluid simulator has been developed to
analyze the characteristics and to optimize the conditions of plasma source for
ICP, one of the most popular etcher.
Ion density distribution
In dry etching, PPID caused by the effect of charge
accumulation has been simulated. The objective is the minimization of defect
from accumulated charge by considering potential variations in the trench by
the surface reaction of ions and accumulated charges.
PPID(Plasma Process Induced Damage) simulation
Particle trajectories and
potential profile in trench etching
Simulation of Magnetron Sputter Plasma
of erosion profiles from simulations and experiments. The parameters of
magnetron sputter is optimized.
Large Area Plasma Source
A uniform large-area plasma,
which is very important in the plasma processing, can be generated along the
quartz tube carrying rf current. The properties of this device are studied by
simulations to increase the plasma density and uniformity.